Gradually Tunable Conductance in TiO2/Al2O3 Bilayer Resistors for Synaptic Device
نویسندگان
چکیده
In this work, resistive switching and synaptic behaviors of a TiO2/Al2O3 bilayer device were studied. The deposition Pt/Ti/TiO2/Al2O3/TiN stack was confirmed by transmission electron microscopy (TEM) energy X-ray dispersive spectroscopy (EDS). initial state before the forming process followed Fowler-Nordheim (FN) tunneling. A strong electric field applied to Al2O3 with large bandgap for FN tunneling, which I-V fitting process. Bipolar conducted set in positive bias reset negative bias. High-resistance (HRS) trap-assisted tunneling (TAT) model while low-resistance (LRS) Ohmic conduction model. Set operations verified pulse. Moreover, potentiation depression biological synapse repetitive pulses pulses. Finally, showed good pattern recognition accuracy (~88.8%) Modified National Institute Standards Technology (MNIST) handwritten digit database single layer neural network including conductance update device.
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ژورنال
عنوان ژورنال: Metals
سال: 2021
ISSN: ['2075-4701']
DOI: https://doi.org/10.3390/met11030440